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Updated: Jul 19, 2026

Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method
Published on: April 18, 2019
Impact ionization can explain carrier multiplication in PbSe quantum dots.
A Franceschetti1, J M An, A Zunger
1National Renewable Energy Laboratory, Golden, Colorado 80401, USA. alberto_franceschetti@nrel.gov
Efficient carrier multiplication in quantum dots, crucial for solar cells, is explained by impact ionization. This mechanism, driven by Coulomb interactions, accounts for the observed rate and energy threshold without exotic theories.
Area of Science:
- Materials Science
- Quantum Mechanics
- Photovoltaics
Background:
- Conventional solar cells face efficiency limits due to energy loss as heat.
- Semiconductor quantum dots exhibit efficient carrier multiplication, generating multiple electron-hole pairs per photon.
- Exotic mechanisms have been proposed for carrier multiplication in PbSe quantum dots.
Purpose of the Study:
- To investigate the mechanism behind efficient carrier multiplication in semiconductor quantum dots.
- To determine if conventional impact ionization can explain carrier multiplication in PbSe quantum dots.
- To validate the role of Coulomb interactions in this process.
Main Methods:
- Atomistic pseudopotential calculations were employed.
- Simulations focused on PbSe quantum dots.
- Analysis centered on photogenerated electron-hole pair dynamics.
Main Results:
- Impact ionization, a conventional mechanism, successfully explains carrier multiplication.
- The calculated rate of carrier multiplication is less than 1 picosecond.
- The energy threshold for carrier multiplication is approximately 2.2 times the band gap.
- Coulomb interactions are identified as the driving force.
Conclusions:
- Impact ionization adequately explains carrier multiplication in PbSe quantum dots.
- There is no need to invoke exotic mechanisms.
- This finding has implications for designing more efficient solar cells.
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