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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

Charge defects glowing in the dark

Bin Deng1, Laurence D Marks, James M Rondinelli

  • 1Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208-3108, USA. b-deng@northwestern.edu

Ultramicroscopy
|November 30, 2006
PubMed

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