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Updated: Jul 18, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

{Ge10Si[Si(SiMe3)3]4(SiMe32)Me}-: a Ge10Si framework reveals a structural transition onto elemental germanium

Andreas Schnepf1

  • 1Department of Inorganic Chemistry, University of Karlsruhe, Engesserstr. Geb. 30.45, 76128 Karlsruhe, Germany. schnepf@chemie.uni-karlsruhe.de

Chemical Communications (Cambridge, England)
|December 21, 2006
PubMed

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