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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

Ionic-electronic conductor nanostructures: template-confined growth and nonlinear electrical transport

Changhao Liang1, Kazuya Terabe, Tsuyoshi Hasegawa

  • 1Nanomaterials Laboratories, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan. liang.changhao@nims.go.jp

Small (Weinheim an Der Bergstrasse, Germany)
|December 29, 2006
PubMed
Summary

No abstract available in PubMed .

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Related Concept Videos

Carrier Transport01:21

Carrier Transport

The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by: