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Updated: Jul 15, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
Electron dephasing and weak localization in Sn doped In(2)O(3) nanowires
Adenilson J Chiquito1, Alexandre J C Lanfredi, Rafaela F M de Oliveira
1Departamento de Física, Universidade Federal de São Carlos, CEP 13565-905, CP 676 São Carlos, São Paulo, Brazil. chiquito@df.ufscar.br
Abstract:
We report on (magneto-) transport measurements of individual In2O3 nanowires. We observed that the presence of a weak disorder arising from doping and electron-boundary collisions leads to weak localization of electrons as revealed by the positive magnetoconductivity in a large range of temperatures ( approximately 77 K). From temperature-dependent resistance and magnetoconductivity data, the electron-electron interaction was pointed out as the mechanism responsible for the increase of resistance in the low temperature range and the dominant source of the dephasing at low temperatures. The experimental data provided the phase coherence time tau(phi) approximately T(-2/3) expected for 1D systems, giving consistent support to the mechanisms underlying the weak-localization and electron-electron scattering theories.
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