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Electrical spin injection and threshold reduction in a semiconductor laser.

M Holub1, J Shin, D Saha

  • 1Solid-State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122, USA.

Physical Review Letters
|May 16, 2007
PubMed
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This study demonstrates a spin-polarized laser using electrical spin injection. This method reduced the threshold current by 11% and achieved 23% circular polarization at 50 K.

Area of Science:

  • Semiconductor lasers
  • Spintronics
  • Materials science

Background:

  • Vertical-cavity surface-emitting lasers (VCSELs) are crucial optoelectronic devices.
  • Controlling spin polarization in semiconductor lasers is key for advanced applications.
  • Electrical spin injection offers a promising route for spin manipulation.

Purpose of the Study:

  • To demonstrate a spin-polarized vertical-cavity surface-emitting laser (VCSEL).
  • To investigate the effects of electrical spin injection on laser performance.
  • To analyze the spin polarization within the laser cavity.

Main Methods:

  • Fabrication of a VCSEL with an Fe/Al0.1Ga0.9As Schottky tunnel barrier for electrical spin injection.
  • Characterization of laser operation under spin-polarized current at 50 K.

Related Experiment Videos

  • Spin-dependent rate equation analysis to determine cavity spin polarization.

    • Main Results:

    • Successful demonstration of laser operation with electrical spin injection.
    • Observed maximum threshold current reduction of 11%.
    • Achieved a maximum degree of circular polarization of 23% at 50 K.
    • Estimated cavity spin polarization of 16.8%.

    Conclusions:

    • Electrical spin injection from a Schottky tunnel barrier is effective for spin-polarized VCSELs.
    • Spin-polarized operation significantly impacts threshold current and polarization.
    • The developed method provides a pathway for efficient spin control in semiconductor lasers.