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Impact of space-energy correlation on variable range hopping in a transistor
J-F Morizur1, Y Ono, H Kageshima
1NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan.
Physical Review Letters
|May 16, 2007
Summary
This study models hopping conduction in transistors using percolation theory. It introduces a formula describing variable range hopping under high electric fields, applicable for experimental analysis.
Area of Science:
- Condensed matter physics
- Solid-state electronics
- Quantum mechanics
Background:
- Hopping conduction is crucial for understanding charge transport in disordered semiconductors.
- Transverse electric fields significantly influence conduction mechanisms in transistors.
- Percolation theory provides a framework for analyzing transport in systems with random disorder.
Purpose of the Study:
- To investigate hopping conduction in transistors under transverse electric fields.
- To develop a theoretical model incorporating space-energy correlations in the impurity band density of states.
- To derive a formula applicable to both low and high electric field regimes.
Main Methods:
- Application of percolation theory to model hopping conduction.
- Inclusion of space-energy correlations in the density of states.
- Computation of the percolation threshold across a range of correlation parameters.
Main Results:
- A novel formula for hopping conduction under transverse electric fields was derived.
- The formula accurately reproduces classical results in the low field limit.
- It describes the emergence of variable range hopping in the high field regime.
Conclusions:
- The developed formula offers a comprehensive description of hopping conduction in transistors.
- It provides a method to experimentally determine the localization radius.
- This work advances the understanding of charge transport in disordered electronic devices.
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