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Updated: Jul 9, 2026
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Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
Resonant photorefractive effect in InGaAs/GaAs multiple quantum wells
Optics Letters
|December 12, 2007
Abstract:
Semi-insulating InGaAs/GaAs multiple quantum wells are fabricated by metal-organic vapor-phase epitaxy and proton implantation. Two-wave mixing gain and four-wave mixing diffraction efficiency are measured at wavelengths of 0.91-0.94microm in the Franz-Keldysh geometry. We observe a large photorefractive effect caused by the excitonic electro-optic effect. The maximum diffraction efficiency reaches ~1.5x10(-4) .
