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Resonant photorefractive effect in InGaAs/GaAs multiple quantum wells.

S Iwamoto, H Kageshima, T Yuasa

    Optics Letters
    |December 12, 2007
    PubMed
    Summary
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    Semi-insulating Indium Gallium Arsenide/Gallium Arsenide (InGaAs/GaAs) quantum wells exhibit a significant photorefractive effect due to the excitonic electro-optic effect. This research demonstrates potential for novel optoelectronic applications using these engineered semiconductor materials.

    Area of Science:

    • Semiconductor Physics
    • Optoelectronics
    • Materials Science

    Background:

    • Semi-insulating InGaAs/GaAs multiple quantum wells are crucial for optoelectronic devices.
    • Understanding photorefractive effects in these materials is key to device performance.
    • The excitonic electro-optic effect influences material properties under electric fields.

    Purpose of the Study:

    • To fabricate semi-insulating InGaAs/GaAs multiple quantum wells.
    • To investigate the photorefractive properties using two-wave mixing and four-wave mixing.
    • To analyze the contribution of the excitonic electro-optic effect to the observed phenomena.

    Main Methods:

    • Metal-organic vapor-phase epitaxy (MOVPE) for material growth.
    • Proton implantation for achieving semi-insulating properties.

    Related Experiment Videos

  • Optical measurements including two-wave mixing gain and four-wave mixing diffraction efficiency at 0.91-0.94 µm wavelengths in Franz-Keldysh geometry.

    • Main Results:

    • Fabrication of high-quality semi-insulating InGaAs/GaAs multiple quantum wells.
    • Observation of a substantial photorefractive effect.
    • Attribution of the photorefractive effect to the excitonic electro-optic effect.
    • Maximum diffraction efficiency measured at approximately 1.5x10⁻⁴.

    Conclusions:

    • The excitonic electro-optic effect significantly contributes to the photorefractive properties of semi-insulating InGaAs/GaAs quantum wells.
    • These findings highlight the potential of InGaAs/GaAs quantum wells for applications requiring large photorefractive responses.
    • Further research could explore optimizing these structures for enhanced optoelectronic device performance.