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Susan J Angus1, Andrew J Ferguson, Andrew S Dzurak

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We fabricated silicon quantum dots with adjustable tunnel barriers. This demonstrates depletion gates effectively define quantum dots in silicon, showing quantum confinement effects.

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Area of Science:

  • Quantum physics
  • Solid-state physics
  • Nanotechnology

Background:

  • Quantum dots are semiconductor nanocrystals with unique optical and electronic properties.
  • Fabricating quantum dots with controlled characteristics is crucial for quantum computing and electronics.
  • Tunable tunnel barriers are essential for controlling electron transport in quantum devices.

Purpose of the Study:

  • To fabricate and characterize silicon quantum dots with tunable tunnel barriers.
  • To investigate quantum confinement effects in silicon quantum dots.
  • To demonstrate the effectiveness of depletion gates for quantum dot definition.

Main Methods:

  • Fabrication of silicon quantum dots using narrow-channel field-effect transistors.
  • Low-temperature transport spectroscopy measurements.
  • Bias spectroscopy to probe excited states.

Main Results:

  • Successfully fabricated silicon quantum dots with tunable tunnel barriers.
  • Observed distinct electron transport characteristics in many-electron and few-electron regimes.
  • Identified excited states in bias spectroscopy, confirming quantum confinement.

Conclusions:

  • Depletion gates are an effective method for defining quantum dots in silicon.
  • The fabricated silicon quantum dots exhibit quantum confinement.
  • This work contributes to the development of silicon-based quantum devices.