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Synchrotron X-ray Microdiffraction and Fluorescence Imaging of Mineral and Rock Samples
Published on: June 19, 2018
Energy-dispersive diffraction with synchrotron radiation and a germanium detector
Veijo Honkimäki1, Pekka Suortti
1European Synchrotron Radiation Facility, BP 220, F-38043 Grenoble, France. honkimak@esrf.fr
Journal of Synchrotron Radiation
|June 26, 2007
Summary
Pile-up effects in germanium (Ge) detectors during synchrotron radiation energy-dispersive diffraction can distort results. A new model accurately corrects these distortions, enabling precise crystal analysis and preventing misinterpretation of diffraction patterns.
Area of Science:
- Materials Science
- Crystallography
- Synchrotron Radiation Physics
Background:
- Intrinsic germanium (Ge) detectors are used in energy-dispersive diffraction (EDD) with synchrotron radiation.
- High-intensity synchrotron beams cause pulse pile-up in detectors, affecting spectral accuracy.
- The storage ring fill pattern significantly influences pile-up characteristics and observed spectra.
Purpose of the Study:
- To study the response of intrinsic Ge detectors in EDD measurements with synchrotron radiation.
- To develop and validate a model for correcting pulse pile-up effects in diffraction spectra.
- To assess the impact of pile-up on crystal structure analysis and potential misinterpretations.
Main Methods:
- Model calculations of detector response and diffraction from perfect silicon (Si) crystals.
- Analysis of pile-up distributions based on synchrotron storage ring fill patterns (e.g., 16-bunch, 1/3 fill).
- Refinement of model parameters by fitting to observed energy spectra from Si wafers.
Main Results:
- Pile-up distributions are characteristic of the storage ring fill pattern, showing single or multiple peaks.
- A validated model successfully corrected pile-up effects in Si crystal diffraction, achieving agreement with dynamical theory.
- Simulations show pile-up peaks can be mistaken for superlattices or phase transitions in powder diffraction.
Conclusions:
- The developed model effectively corrects for pulse pile-up in Ge detectors for EDD.
- Accurate corrections enable precise analysis of crystal structures and validate diffraction theories.
- Careful consideration of pile-up is crucial to avoid misinterpreting diffraction data, especially in strain mapping.
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