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Surface transfer p-type doping of epitaxial graphene
Wei Chen1, Shi Chen, Dong Chen Qi
1Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore. phycw@nus.edu.sg
Journal of the American Chemical Society
|August 2, 2007
Summary
Epitaxial graphene can be p-type doped using tetrafluoro-tetracyanoquinodimethane (F4-TCNQ) via a novel surface transfer doping method. This technique offers a simple, effective way to modify graphene for nanoelectronics.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Surface Science
Background:
- Epitaxial graphene grown on silicon carbide (SiC) is a promising material for electronic applications.
- Controlling the electronic properties, such as doping type, is crucial for device fabrication.
- Existing doping methods can be complex or destructive.
Purpose of the Study:
- To investigate a novel surface transfer doping scheme for epitaxial graphene.
- To demonstrate the effectiveness of tetrafluoro-tetracyanoquinodimethane (F4-TCNQ) as a surface dopant.
- To explore the potential of this method for nanoelectronics.
Main Methods:
- Growth of epitaxial graphene on 6H-SiC(0001).
- Surface modification using the electron acceptor F4-TCNQ.
- Synchrotron-based high-resolution photoemission spectroscopy (HR-PES) for electronic structure analysis.
Main Results:
- Successful p-type doping of epitaxial graphene was achieved.
- Evidence of electron transfer from graphene to adsorbed F4-TCNQ was observed.
- The F4-TCNQ surface modification acts as an effective p-type dopant.
Conclusions:
- Surface modification with molecular acceptors like F4-TCNQ is a viable strategy for graphene doping.
- This novel transfer doping scheme is simple, effective, and nondestructive.
- The method holds promise for future nanoelectronic applications utilizing doped epitaxial graphene.
