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Dual-band pixelless upconversion imaging devices.

Le Ke Wu¹, Hui Lian Hao, Wen Zhong Shen

¹Department of Physics, Laboratory of Condensed Matter Spectroscopy and Opto-Electronic Physics, Shanghai Jiao Tong University, 1954 Hua Shan Road, Shanghai 200030, China.

|August 19, 2007

Summary

This study introduces a novel dual-band imaging device using photon frequency upconversion for mid-infrared and far-infrared detection. The device achieves high-quality imaging with excellent resolution and efficiency.

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Area of Science:

Optoelectronics
Infrared Imaging
Semiconductor Devices

Background:

Mid-infrared (MIR) and far-infrared (FIR) imaging are crucial for various applications.
Existing dual-band detectors often face challenges in performance and integration.

Purpose of the Study:

To propose and develop a novel MIR and FIR dual-band imaging device.
To demonstrate the feasibility of photon frequency upconversion for dual-band infrared detection.

Main Methods:

Integration of a GaN/AlGaN detector with a GaN/AlGaN violet light emitting diode.
Optimization of multiperiod GaN emitter/AlGaN barrier detectors.
Analysis using modulation transfer function and upconversion efficiency.

Main Results:

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Successful demonstration of pixelless upconversion imaging in both MIR and FIR bands.
Achieved good image resolution and high quantum efficiency.
Demonstrated negligible crosstalk between the two bands.

Conclusions:

The proposed GaN/AlGaN dual-band detector is effective for pixelless upconversion imaging.
The device shows significant potential for advanced infrared imaging applications.
The technology offers a promising solution for high-performance dual-band infrared detection.