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Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
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Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes

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Deep ultraviolet light-emitting hexagonal boron nitride synthesized at atmospheric pressure

Yoichi Kubota1, Kenji Watanabe, Osamu Tsuda

  • 1National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan. kubota.yoichi@nims.go.jp

Science (New York, N.Y.)
|August 19, 2007
PubMed

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