Related Experiment Video
Updated: Jul 13, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Nondestructive inspection of low atomic number media using inelastic photon scattering
1Department of Physics, University of Jordan, PO Box 13099, Amman, Jordan. j_sharaf@ju.edu.jo
Abstract:
The purpose of this study was to examine the potential of using scatter information to evaluate tissue density at selected sites. A method for non-invasively generating profiles of density distribution within an object using Compton scattered X-rays is presented. The Compton scatter method is modified to scan longitudinal sections of composite phantoms and samples of tissue substitute materials. Line scan data are used to describe how the detected count rate changes in response to localized density variations within an extended object. The physical limitations of quantification are discussed, including the effect of attenuation, multiple scatter, and limited spatial resolution. Further, the theory of the method, its performance and results of experimental phantom studies are described. The results presented indicate that the suggested method has the potential for measuring physical density distribution within an object with a spatial resolution of 2mm and an accuracy of approximately 4% under the circumstances in which attenuation correction is avoided.
Related Concept Videos
Atomic Emission Spectroscopy: Lab
Scanning Electron Microscopy
Fundamental Principles
Accelerated...
Atomic Emission Spectroscopy: Overview
Atomic Emission Spectroscopy: Instrumentation
Atomic Spectroscopy: Absorption, Emission, and Fluorescence
Atomic Emission Spectroscopy: Interference

