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Updated: Jul 12, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

Gallium arsenide transistors: realization through a molecularly designed insulator

P P Jenkins, A N Macinnes, M Tabib-Azar

    Science (New York, N.Y.)
    |March 25, 1994
    PubMed

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