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Updated: Jul 10, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Random resistor network model of minimal conductivity in graphene
Vadim V Cheianov1, Vladimir I Fal'ko, Boris L Altshuler
1Physics Department, Lancaster University, Lancaster, LA1 4YB, United Kingdom.
Abstract:
Transport in undoped graphene is related to percolating current patterns in the networks of n- and p-type regions reflecting the strong bipolar charge density fluctuations. Finite transparency of the p-n junctions is vital in establishing the macroscopic conductivity. We propose a random resistor network model to analyze scaling dependencies of the conductance on the doping and disorder, the quantum magnetoresistance and the corresponding dephasing rate.
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