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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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Resistance switching characteristics of HfO2 film with electrode for resistance change random access memory

In-Sung Park1, Joo-Ho Lee, Sunwoo Lee

  • 1Information Display Research Institute, Hanyang University, Seoul 133-791, Korea.

Journal of Nanoscience and Nanotechnology
|December 1, 2007
PubMed

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