Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
Biasing of FET01:22

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

The canopy: a novel vertical airflow device with ceramic wall flow filters for reducing airborne pathogen spread in hospital rooms.

The Journal of hospital infection·2025
Same author

Auditory spatial cueing reduces neglect after right-hemispheric stroke: A proof of concept study.

Cortex; a journal devoted to the study of the nervous system and behavior·2022
Same author

First-line surgery in prolactinomas: lessons from a long-term follow-up study in a tertiary referral center.

Journal of endocrinological investigation·2021
Same author

Biomimetic reconstruction of the hematopoietic stem cell niche for in vitro amplification of human hematopoietic stem cells.

PloS one·2020
Same author

High risk of permanent stoma after anastomotic leakage in anterior resection for rectal cancer.

Colorectal disease : the official journal of the Association of Coloproctology of Great Britain and Ireland·2018
Same author

Causes of mortality and morbidity in free-ranging mustelids in Switzerland: necropsy data from over 50 years of general health surveillance.

BMC veterinary research·2018
Same journal

Gaussian-modulated continuous-variable quantum key distribution over 60 km fiber using an integrated silicon photonic receiver.

Optics letters·2026
Same journal

E2E-OCT: end-to-end joint learning model using optical coherence tomography images for vocal cord leukoplakia diagnosis.

Optics letters·2026
Same journal

Holographic generation of panoramic 3D scenes by concave ellipsoidal mirror reflection.

Optics letters·2026
Same journal

Dual-pilot phase recovery with pair-wise maximum-ratio combining for coherent PONs.

Optics letters·2026
Same journal

Mapping the whispering gallery modes of a CaF<sub>2</sub> disk resonator with half-tapered fibers to estimate the fundamental mode volume.

Optics letters·2026
Same journal

Quantitative estimation of deep-subwavelength scale via dark-field scattering axial energy concentration decay profiles.

Optics letters·2026
See all related articles

Related Experiment Video

Updated: Jul 8, 2026

Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing
15:58

Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing

Published on: December 3, 2013

Phase-modulation-induced two-wave mixing in semiconductors.

R Frey, J Frey, C Flytzanis

    Optics Letters
    |February 15, 1997
    PubMed
    Summary
    This summary is machine-generated.

    This study demonstrates two-wave mixing amplification in semiconductors by introducing a probe beam before the pump pulse. This novel method achieves significant net gain, showing potential for optical processing applications.

    More Related Videos

    Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
    14:58

    Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

    Published on: June 3, 2015

    Generation and Coherent Control of Pulsed Quantum Frequency Combs
    06:42

    Generation and Coherent Control of Pulsed Quantum Frequency Combs

    Published on: June 8, 2018

    Related Experiment Videos

    Last Updated: Jul 8, 2026

    Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing
    15:58

    Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing

    Published on: December 3, 2013

    Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
    14:58

    Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

    Published on: June 3, 2015

    Generation and Coherent Control of Pulsed Quantum Frequency Combs
    06:42

    Generation and Coherent Control of Pulsed Quantum Frequency Combs

    Published on: June 8, 2018

    Area of Science:

    • Nonlinear optics
    • Semiconductor physics

    Background:

    • Two-wave mixing is a nonlinear optical process.
    • Amplification typically requires specific phase-matching conditions.

    Purpose of the Study:

    • To demonstrate and investigate two-wave mixing amplification of a weak probe beam by a strong pump beam in a semiconductor.
    • To explore the role of self-phase modulation and cross-phase modulation in this process.

    Main Methods:

    • Experimental demonstration of two-wave mixing with a specific temporal ordering of probe and pump beams.
    • Utilizing Cadmium Telluride (CdTe) as the semiconductor sample.
    • Theoretical calculations to validate experimental observations.

    Main Results:

    • Achieved net gain coefficients up to 5.5 cm⁻¹ in CdTe.
    • Confirmed that the probe beam entering before the pump pulse enables amplification.
    • Identified the differential modification of instantaneous frequencies by self- and cross-phase modulation as the key mechanism.

    Conclusions:

    • The demonstrated two-wave mixing technique offers a new pathway for optical amplification in semiconductors.
    • Theoretical models quantitatively support the experimental findings.
    • Potential for higher gains in more resonant configurations or with increased pump energies suggests applications in optical processing.