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Powerful, diffraction-limited semiconductor laser using photorefractive beam coupling.

S Maccormack, G D Bacher, J Feinberg

    Optics Letters
    |February 15, 1997
    PubMed
    Summary
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    Researchers generated a high-power, diffraction-limited laser beam using semiconductor laser amplifiers and a photorefractive crystal. This method achieved 1.09 W output, demonstrating potential for scalable laser systems.

    Area of Science:

    • Optics and Photonics
    • Semiconductor Lasers
    • Nonlinear Optics

    Background:

    • High-power, diffraction-limited laser sources are crucial for various applications.
    • Semiconductor laser amplifiers offer potential for compact and efficient laser systems.
    • Beam quality degradation is a common challenge in high-power semiconductor lasers.

    Purpose of the Study:

    • To develop a method for generating high-power, diffraction-limited laser beams.
    • To investigate the use of semiconductor laser amplifiers and photorefractive crystals for beam generation.
    • To demonstrate the scalability of the proposed technique to amplifier arrays.

    Main Methods:

    • Utilized semiconductor laser amplifiers, specifically flared amplifiers.
    • Employed a photorefractive crystal for beam cleanup and amplification.

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  • Investigated both single amplifier and array configurations.

    • Main Results:

    • Achieved a 1.09 W diffraction-limited laser beam at 860 nm from a single flared amplifier.
    • Obtained this output from 2.2 W of pump power, indicating high efficiency.
    • Demonstrated efficient beam coupling using an array of flared amplifiers.

    Conclusions:

    • The combination of semiconductor laser amplifiers and photorefractive crystals is an effective method for producing high-power, diffraction-limited beams.
    • The technique is scalable and applicable to semiconductor amplifier arrays.
    • This approach offers a promising route to high-power, high-quality laser sources.