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Published on: June 18, 2013
InP nanowire/polymer hybrid photodiode
Clint J Novotny1, Edward T Yu, Paul K L Yu
1Department of Electrical and Computer Engineering, University of California-San Diego, La Jolla, CA 92093, USA.
Nano Letters
|February 13, 2008
Summary
This study introduces a new nanowire/polymer hybrid photodiode using indium phosphide (InP) nanowires on indium tin oxide (ITO). This design significantly enhances current conduction and shows promise for advanced solar cell applications.
Area of Science:
- Materials Science
- Nanotechnology
- Optoelectronics
Background:
- Current polymer solar cells face limitations in efficiency and cost.
- Developing novel hybrid materials is crucial for advancing photovoltaic technology.
Purpose of the Study:
- To design and characterize a novel nanowire/polymer hybrid photodiode.
- To improve carrier collection efficiency and explore alternative substrates for photodiodes.
Main Methods:
- Direct growth of n-InP nanowires onto indium tin oxide (ITO) electrodes.
- Envelopment of nanowires with poly(3-hexylthiophene) conjugated polymer.
- Electrical and photoresponse characterization of the hybrid device.
Main Results:
- Achieved ohmic contact between InP nanowires and ITO electrode.
- Demonstrated a 6-7 order of magnitude increase in forward bias current compared to polymer-only devices.
- Obtained a high rectification ratio of 155 and a low ideality factor of 1.31.
Conclusions:
- The InP/polymer hybrid photodiode design offers enhanced performance.
- This architecture shows potential as a cost-effective alternative for polymer solar cells.
