Contact-induced crystallinity for high-performance soluble acene-based transistors and circuits

D J Gundlach1, J E Royer, S K Park

  • 1Semiconductor Electronics Division, Electronics and Electrical Engineering Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899-8120, USA. david.gundlach@nist.gov

Nature Materials
|February 19, 2008
PubMed

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