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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
Electrical bistability in zinc oxide nanoparticle-polymer composites.
Basudev Pradhan1, Swarup K Majee, Sudip K Batabyal
1Indian Association for the Cultivation of Science, Department of Solid State Physics, Kolkata 700032, India.
Journal of Nanoscience and Nanotechnology
|February 21, 2008
Summary
This study reveals electrical bistability in ZnO nanoparticle films, a reversible memory effect. This phenomenon enables potential applications in read-only and random-access memory devices.
Area of Science:
- Materials Science
- Nanotechnology
- Electrical Engineering
Background:
- Electrical bistability in thin films is crucial for advanced electronic memory.
- Zinc oxide (ZnO) nanoparticles offer unique electronic properties for device applications.
Purpose of the Study:
- To investigate electrical bistability in ZnO nanoparticle-polymer composite films.
- To understand the charge transport mechanisms underlying the observed bistability.
- To explore the memory applications of these ZnO-based films.
Main Methods:
- Fabrication of thin films with ZnO nanoparticles embedded in a polymer matrix.
- Characterization using current-voltage (I-V) measurements.
- Analysis of impedance spectroscopy to study electrical properties.
Main Results:
- Observed reversible electrical bistability in the ZnO nanoparticle films.
- Identified distinct conducting states and associated transport mechanisms.
- Demonstrated the memory phenomenon inherent in the film's electrical behavior.
Conclusions:
- Electrical bistability in ZnO nanoparticle films is a viable memory effect.
- The reversible nature of bistability supports its use in memory devices.
- Potential applications include read-only memory (ROM) and random-access memory (RAM).

