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Related Experiment Videos

Dual-domain point diffraction interferometer.

P P Naulleau1, K A Goldberg

  • 1Center for X-Ray Optics, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.

Applied Optics
|March 6, 2008
PubMed
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A new dual-domain point diffraction interferometer reduces noise for characterizing extreme ultraviolet lithography systems. This refined design enhances metrology accuracy by minimizing scattered light interference.

Area of Science:

  • Optics and Metrology
  • Semiconductor Manufacturing Technology

Background:

  • Extreme ultraviolet (EUV) lithography is crucial for advanced semiconductor manufacturing.
  • Characterizing EUV projection systems presents significant metrology challenges.
  • Existing point diffraction interferometers can be susceptible to scattered light noise.

Purpose of the Study:

  • To present a refined phase-shifting point diffraction interferometer.
  • To overcome noise limitations in previous designs.
  • To improve metrology for EUV lithography systems.

Main Methods:

  • Development of a hybrid spatial- and temporal-domain (dual-domain) interferometer.
  • Detailed theoretical description of the dual-domain interferometer.
  • Experimental implementation and testing of the refined interferometer.

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Main Results:

  • The refined interferometer demonstrates reduced susceptibility to scattered light noise.
  • Successful characterization of EUV projection lithography systems is achieved.
  • Experimental results validate the theoretical model of the dual-domain interferometer.

Conclusions:

  • The dual-domain point diffraction interferometer offers enhanced performance for EUV metrology.
  • This improved interferometer addresses critical challenges in semiconductor lithography.
  • The refined design contributes to more accurate characterization of advanced lithography systems.