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Spectral-purity-enhancing layer for multilayer mirrors.

M M J W van Herpen1, R W E van de Kruijs, D J W Klunder

  • 1Philips Research Laboratories, Eindhoven, The Netherlands. maarten.van.herpen@philips.com

Optics Letters
|March 19, 2008
PubMed
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New multilayer mirrors significantly reduce unwanted radiation in extreme ultraviolet lithography. This spectral purity enhancement improves tool performance by minimizing out-of-band light while maintaining high in-band reflectance.

Area of Science:

  • Optics
  • Materials Science
  • Nanotechnology

Background:

  • Extreme ultraviolet (EUV) lithography is crucial for advanced semiconductor manufacturing.
  • Minimizing out-of-band (OOB) radiation is critical for EUV lithography tool performance and yield.
  • Current multilayer mirrors face challenges in effectively suppressing OOB radiation.

Purpose of the Study:

  • To design and fabricate novel multilayer mirror systems for enhanced spectral purity in EUV lithography.
  • To theoretically and experimentally validate the effectiveness of these mirrors in reducing OOB radiation.
  • To assess the impact of spectral purity enhancement on in-band reflectance.

Main Methods:

  • Theoretical modeling of multilayer mirror designs for spectral purity enhancement.

Related Experiment Videos

  • Experimental fabrication of proof-of-principle spectral-purity-enhancement layers.
  • Measurement of in-band and out-of-band reflectance characteristics of the fabricated mirrors.
  • Comparison of performance against standard capped multilayer mirrors.

    • Main Results:

    • Demonstrated substantial reduction in OOB radiation using specialized multilayer mirror systems.
    • Achieved a five-fold reduction in OOB reflectance in the proof-of-principle experiment.
    • Observed a minimal absolute decrease of 4.5% in in-band reflectance compared to standard mirrors.

    Conclusions:

    • Specialized multilayer mirrors are effective in enhancing spectral purity for EUV lithography.
    • The developed mirror systems offer a viable solution for reducing OOB radiation.
    • This advancement has the potential to improve the efficiency and reliability of EUV lithographic tools.