Surface conductivity of hydrogenated diamond films
Antonis N Andriotis1, Giannis Mpourmpakis, Ernst Richter
1Institute of Electronic Structure and Laser, FORTH, P.O. Box 1527, 71110 Heraklio, Crete, Greece. andriot@iesl.forth.gr
Abstract:
The experimentally observed high surface conductivity of hydrogenated diamond films is explained through ab initio results as well as model calculations based on the tight-binding molecular dynamics method. Our results support the previously reported experimental results indicating that the surface conductivity of the hydrogenated diamond surfaces is due to the surface adsorption of a H(3)O(+) monolayer. Specifically, it is shown that the presence of the H(3)O(+) adlayer results in the formation of an electrostatic surface dipole moment which makes the potential of the surface H layer effectively more attractive. This, in turn, ignites charge transfer from the diamond lattice to the surface layer creating, thus, the necessary charge carriers (holes) for the observed high conductivity.
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