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Control of gold surface diffusion on si nanowires
Martien I den Hertog1, Jean-Luc Rouviere, Florian Dhalluin
1Laboratoire d'Etude des Matériaux par Microscopie Avancée, CEA/DRFMC, CEA-Grenoble, 17 rue des Martyrs, 38052 Grenoble Cedex 9, France. martien.den-hertog@cea.fr
Nano Letters
|April 22, 2008
Summary
Controlling gold diffusion on silicon nanowire sidewalls is possible by adjusting silane pressure and temperature. This prevents gold clusters, influencing nanowire morphology and enabling tailored growth.
Area of Science:
- Materials Science
- Nanotechnology
- Surface Chemistry
Background:
- Silicon nanowires (NWs) are synthesized using the vapor-liquid-solid (VLS) mechanism.
- Gold catalyst particles are essential for NW growth, but can diffuse onto sidewalls.
- Sidewall gold clusters can alter NW properties and morphology.
Purpose of the Study:
- To investigate the factors controlling gold diffusion on silicon nanowire sidewalls.
- To understand the impact of gold clusters on NW sidewall morphology.
- To identify optimal growth conditions for minimizing sidewall gold contamination.
Main Methods:
- Vapor-liquid-solid (VLS) growth of silicon nanowires using silane precursor and gold catalyst.
- High-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) for imaging.
- Scanning electron microscopy (SEM) for surface morphology analysis.
Main Results:
- Gold surface diffusion is controllable via silane partial pressure, growth temperature, and NW diameter.
- High silane pressure, low temperature, and small NW diameters prevent gold cluster formation.
- The presence or absence of gold on sidewalls significantly affects NW surface morphology.
Conclusions:
- Silane adsorption on NW sidewalls is the primary mechanism governing gold diffusion.
- Precise control over VLS growth parameters allows for tailored silicon nanowire sidewall properties.
- Minimizing sidewall gold contamination is achievable for specific applications.
