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Optically modulated internal strain in InGaN quantum dots grown on SiN(x) nano masks
H J Chang1, T T Chen, L L Huang
1Department of Physics, National Taiwan University, Taipei 106, Taiwan.
Optics Express
|June 11, 2008
Summary
Optically modulated internal strain in Indium Gallium Nitride (InGaN) quantum dots (QDs) was observed. This strain tuning offers a method for enhancing optoelectronic device performance.
Area of Science:
- Semiconductor Nanostructures
- Optoelectronics
- Quantum Dot Physics
Background:
- Indium Gallium Nitride (InGaN) quantum dots (QDs) are crucial for optoelectronic devices.
- Controlling internal strain in nanostructures is key to tuning their properties.
Purpose of the Study:
- To investigate optically modulated internal strain in InGaN QDs.
- To understand the mechanism behind strain modulation and its effects.
- To explore applications in tuning physical properties for advanced devices.
Main Methods:
- Deposition of InGaN QDs on SiN(x) nano masks.
- Optical modulation techniques to induce and observe strain.
- Analysis of refractive index changes and phonon redshift.
Main Results:
- Observed optically modulated internal strain in InGaN QDs.
- Demonstrated strain-induced changes in refractive index.
- Reported redshift of InGaN A(1)(LO) phonon due to strain.
- Explained mechanism via converse piezoelectric effect and charge carrier separation.
Conclusions:
- Optically modulated strain provides a method for fine-tuning properties of nitride-based nanostructures.
- This technique is vital for developing high-quality optoelectronic devices.
- The converse piezoelectric effect plays a key role in strain modulation.
