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Diode: Forward bias01:20

Diode: Forward bias

In semiconductor devices, diodes play a crucial role in directing current flow, and its operation is primarily categorized into forward bias and reverse bias. A diode is said to be forward-biased when its p-type region is connected to the positive terminal of a battery and its n-type region is linked to the negative terminal. This configuration reduces the potential barrier within the diode, allowing current to flow easily from the p to the n-type region.
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Construction and Characterization of External Cavity Diode Lasers for Atomic Physics
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Variable-load quenching circuit for single-photon avalanche diodes.

Simone Tisa1, Fabrizio Guerrieri, Franco Zappa

  • 1Politecnico di Milano, Dip. Elettronica e Informazione - piazza Leonardo da Vinci 32, I-20133 Milano, Italy. tisa@elet.polimi.it

Optics Express
|June 11, 2008
PubMed
Summary
This summary is machine-generated.

We developed a compact cell for single-photon detection using a novel quenching circuit integrated with a CMOS Single-Photon Avalanche Diode (SPAD). This technology enables dense SPAD arrays for advanced imaging applications.

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Area of Science:

  • Photonics and Optoelectronics
  • Integrated Circuits
  • Semiconductor Devices

Background:

  • Single-photon detection is crucial for advanced imaging and sensing.
  • Existing Single-Photon Avalanche Diode (SPAD) circuits face challenges in size, power consumption, and performance.
  • The need for compact, high-performance SPADs for dense array integration is increasing.

Purpose of the Study:

  • To present a novel, compact cell for single-photon detection.
  • To introduce a new Variable-Load Quenching Circuit (VLQC) for SPADs.
  • To demonstrate the feasibility of dense SPAD arrays for photon-counting imaging.

Main Methods:

  • Monolithic integration of a 20 µm-diameter CMOS SPAD with a novel VLQC.
  • Fabrication using a standard 0.35 µm CMOS technology.
  • Characterization of the cell's performance, including hold-off time, reset time, avalanche charge, and timing jitter.

Main Results:

  • A compact 50 µm x 100 µm cell for single-photon detection was achieved.
  • The VLQC enables SPAD bias voltage exceeding chip supply voltage.
  • Excellent performance metrics were obtained: hold-off (40 ns–2 µs), reset (≤2 ns), low avalanche charge (≤1.6 pC), and timing jitter (<40 ps).

Conclusions:

  • The developed VLQC SPAD cell offers a significant advancement in single-photon detection technology.
  • The compact size and high performance enable the development of large-dimension, dense SPAD arrays.
  • This technology paves the way for high-resolution, photon-counting 2D imaging with precise timing.