Dynamical effects of anisotropic inelastic scattering in electron backscatter diffraction

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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

Aimo Winkelmann1

  • 1Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle, Germany. winkelm@mpi-halle.mpg.de

Ultramicroscopy
|June 28, 2008
PubMed

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