Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Types Of Superconductors01:28

Types Of Superconductors

A superconductor is a substance that offers zero resistance to the electric current when it drops below a critical temperature. Zero resistance is not the only interesting phenomenon as materials reach their transition temperatures. A second effect is the exclusion of magnetic fields. This is known as the Meissner effect. A light, permanent magnet placed over a superconducting sample will levitate in a stable position above the superconductor. High-speed trains that levitate on strong...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Stretchable high-fill-factor silicon-liquid metal platform for multilevel visual acquisition and depth sensing.

Nature materials·2026
Same author

Edge-intelligent bimodal iontronic skin for human-robot collaboration.

National science review·2026
Same author

Broadband Circularly Polarized Light Detection via Spin-Selective Charge Transport in Quantum Dot Photodiodes.

Advanced materials (Deerfield Beach, Fla.)·2026
Same author

Facile and robust integration of functional hydrogels into micropillar-structured elastomer platforms for stable cardiac bioelectronics.

Science advances·2026
Same author

Chemically anchored metal-hydrogel bilayers for ultrasoft and metallic biointerfaces.

Nanoscale horizons·2025
Same author

2D Silver Nanosheet Assembly for an Isotropic, Stretchable, and Highly Conductive Nanomembrane.

Advanced materials (Deerfield Beach, Fla.)·2025
Same journal

Selective Degradation of Polyurethanes in Mixed Plastic Wastes via Ir-Catalyzed Hydrogenolysis.

Angewandte Chemie (International ed. in English)·2026
Same journal

Covalent Organic Framework Photocatalysts: Decoding Linkage Chemistry in Hydrogen Peroxide Synthesis From Air and Water.

Angewandte Chemie (International ed. in English)·2026
Same journal

Anomeric Amide Enabled Divergent Synthesis of Unsymmetrical Ureas, Carbamates, Thioesters, and Amides From Aldehydes.

Angewandte Chemie (International ed. in English)·2026
Same journal

Anisotropic Magneto-Chiral Dichroism in Lanthanide Complexes.

Angewandte Chemie (International ed. in English)·2026
Same journal

Engineering LE-CT State Synergy in Aminoboranes for Single Molecule White Light Emission and Dual-Mode Chiroptical/Phosphorescence Output.

Angewandte Chemie (International ed. in English)·2026
Same journal

Editable Hydrogen Bond Network Within the Electric Double Layer for CO<sub>2</sub> Reduction.

Angewandte Chemie (International ed. in English)·2026
See all related articles

Related Experiment Video

Updated: Jul 3, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

Semiconductor wires and ribbons for high-performance flexible electronics.

Alfred J Baca1, Jong-Hyun Ahn, Yugang Sun

  • 1Department of Chemistry and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA.

Angewandte Chemie (International Ed. in English)
|July 11, 2008
PubMed
Summary
This summary is machine-generated.

Researchers are developing high-performance inorganic semiconductor materials for flexible electronics. This review covers their fabrication, assembly on plastic substrates, and mechanical properties for advanced applications.

More Related Videos

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators
09:46

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators

Published on: August 8, 2025

A Fabrication Method for Highly Stretchable Conductors with Silver Nanowires
07:50

A Fabrication Method for Highly Stretchable Conductors with Silver Nanowires

Published on: January 21, 2016

Related Experiment Videos

Last Updated: Jul 3, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators
09:46

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators

Published on: August 8, 2025

A Fabrication Method for Highly Stretchable Conductors with Silver Nanowires
07:50

A Fabrication Method for Highly Stretchable Conductors with Silver Nanowires

Published on: January 21, 2016

Area of Science:

  • Materials Science
  • Electronics Engineering
  • Nanotechnology

Background:

  • High-performance electronics on flexible substrates are challenging due to material limitations.
  • Macroelectronic devices require robust inorganic semiconductors compatible with polymeric substrates.
  • Existing methods often struggle to achieve desired performance on low-temperature plastics.

Purpose of the Study:

  • To review inorganic semiconductor materials for flexible and bendable large-area electronics.
  • To highlight fabrication and assembly techniques for these materials on plastic substrates.
  • To discuss the mechanics and potential of stretchable and bendable inorganic semiconductors.

Main Methods:

  • Review of bottom-up and top-down fabrication approaches for inorganic semiconductor materials (wires, ribbons, membranes, sheets, bars).
  • Analysis of assembly strategies for depositing thin films onto polymeric substrates.
  • Examination of the mechanical properties of flexible and stretchable inorganic semiconductor forms.

Main Results:

  • Significant advancements in creating high-quality, bendable inorganic semiconductor materials.
  • Demonstration of various material forms (wires, ribbons, etc.) suitable for flexible electronics.
  • Progress in understanding the mechanics of stretchable and bendable inorganic semiconductor circuits, including 3D layouts.

Conclusions:

  • Inorganic semiconductors offer a promising route to high-performance flexible and bendable electronics.
  • Advanced fabrication and assembly techniques are crucial for success on polymeric substrates.
  • Future research should focus on further enhancing material properties and exploring novel device architectures.