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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Scanning gate microscopy of a nanostructure where electrons interact
Axel Freyn1, Ioannis Kleftogiannis, Jean-Louis Pichard
1CEA, IRAMIS, Service de Physique de l'Etat Condensé (CNRS URA 2464), F-91191 Gif-sur-Yvette, France.
Abstract:
We show that scanning gate microscopy can be used for probing electron-electron interactions inside a nanostructure. We assume a simple model made of two noninteracting strips attached to an interacting nanosystem. In one of the strips, the electrostatic potential can be locally varied by a charged tip. This change induces corrections upon the nanosystem Hartree-Fock self-energies which enhance the fringes spaced by half the Fermi wavelength in the images giving the quantum conductance as a function of the tip position.
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