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Multimodal Nonlinear Hyperspectral Chemical Imaging Using Line-Scanning Vibrational Sum-Frequency Generation Microscopy
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Gigahertz stroboscopy with the scanning electron microscope.

T Hosokawa1, H Fujioka, K Ura

  • 1Electron Beam Laboratory, Osaka University, Yamada-Kami, Suita, Osaka 565, Japan.

The Review of Scientific Instruments
|September 1, 1978
PubMed
Summary
This summary is machine-generated.

Stroboscopic scanning electron microscopy reveals gigahertz Gunn effect device dynamics. Researchers observed two-dimensional voltage contrast and nonuniform domain propagation in pulsed operation using 1.5 ps beam pulses.

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Area of Science:

  • Physics
  • Electrical Engineering
  • Materials Science

Background:

  • Gunn effect devices are crucial for high-frequency electronics.
  • Understanding their high-speed operation is essential for device optimization.
  • Pulsed operation and gigahertz frequencies present significant characterization challenges.

Purpose of the Study:

  • To explore the application of stroboscopic scanning electron microscopy (S-SEM) for analyzing gigahertz Gunn effect devices.
  • To investigate device behavior under pulsed operation using S-SEM.
  • To demonstrate novel techniques for high-speed device characterization.

Main Methods:

  • Utilized stroboscopic scanning electron microscopy (S-SEM) with picosecond beam pulses.
  • Employed two operational modes: deflection mode and bunching mode.
  • Developed and applied a specialized technique for observing pulsed device operation.

Main Results:

  • Achieved two-dimensional voltage contrast imaging in a 1 GHz Gunn effect device using the bunching mode with 1.5 ps pulses.
  • Successfully visualized nonuniform domain propagation in a 3D Gunn device under pulsed operation.
  • Demonstrated the efficacy of the presented technique for analyzing devices with a low duty cycle (4x10^-3).

Conclusions:

  • S-SEM is a powerful tool for characterizing gigahertz Gunn effect devices under pulsed conditions.
  • The observed voltage contrast and domain propagation provide critical insights into device physics.
  • The developed techniques enable detailed analysis of high-speed semiconductor device behavior.