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Electronic transport properties of the Ising quantum Hall ferromagnet in a Si quantum well
Kiyohiko Toyama1, Takahisa Nishioka, Kentarou Sawano
1Department of Physics, University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo 113-0033, Japan.
Abstract:
Magnetotransport properties are investigated for a high mobility Si two-dimensional electron system in the vicinity of a Landau level crossing point. At low temperatures, the resistance peak having a strong anisotropy shows large hysteresis which is attributed to Ising quantum Hall ferromagnetism. The peak is split into two peaks in the paramagnetic regime. A mean field calculation for the peak positions indicates that electron scattering is strong when the pseudospin is partially polarized. We also study the current-voltage characteristics which exhibit a wide voltage plateau.
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