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Published on: March 24, 2019
Spin Absorption Effect at Ferromagnet/Ge Schottky-Tunnel Contacts
Michihiro Yamada1, Yuichi Fujita2, Shinya Yamada3,4
1Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka 560-8531, Japan. michihiro@ee.es.osaka-u.ac.jp.
Abstract:
We study the influence of the junction size in ferromagnet (FM)/semiconductor (SC) contacts on four-terminal nonlocal spin signals in SC-based lateral spin-valve (LSV) structures. When we use FM/Ge Schottky-tunnel junctions with relatively low resistance-area products, the magnitude of the nonlocal spin signal depends clearly on the junction size, indicating the presence of the spin absorption effect at the spin-injector contact. The temperature-dependent spin signal can also be affected by the spin absorption effect. For SC spintronic applications with a low parasitic resistance, we should consider the influence of the spin absorption on the spin-transport signals in SC-based device structures.
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