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Updated: Jul 2, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Nonadiabatic charge pumping in a hybrid single-electron transistor
Dmitri V Averin1, Jukka P Pekola
1Department of Physics and Astronomy, Stony Brook University, SUNY, Stony Brook, New York 11794-3800, USA.
Abstract:
We study theoretically current quantization in the charge turnstile based on the superconductor-normal-metal single-electron transistor. The quantization accuracy is limited by either Andreev reflection or by Cooper-pair-electron cotunneling. The rates of these processes are calculated in the "above-the-threshold" regime when they compete directly with the lowest-order tunneling. By shaping the ac gate voltage drive it should be possible to achieve the metrological accuracy of 10;{-8}, while maintaining the quantized current on the level of 30 pA, just by one turnstile with realistic parameters using aluminum as a superconductor.
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