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Analysis of Contact Interfaces for Single GaN Nanowire Devices
Published on: November 15, 2013
Control of InAs nanowire growth directions on Si
Katsuhiro Tomioka1, Junichi Motohisa, Shinjiroh Hara
1Graduate School of Information Science and Technology, Hokkaido University, North14 West9, 060-0814, Sapporo, Japan. tomioka@rciqe.hokudai.ac.jp
Nano Letters
|September 12, 2008
Abstract:
We report on control of growth directions of InAs nanowires on Si substrate. We achieved to integrate vertical InAs nanowires on Si by modifying initial Si(111) surface in selective-area metal-organic vapor phase epitaxy with flow-rate modulation mode at low temperature. Cross-sectional transmission electron microscope and Raman scattering showed that misfit dislocation with local strains were accommodated in the interface.
