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Column ratio mapping: a processing technique for atomic resolution high-angle annular dark-field (HAADF) images.

Paul D Robb¹, Alan J Craven

¹Department of Physics and Astronomy, University of Glasgow, Glasgow G12 8QQ, UK. p.robb@imperial.ac.uk

Ultramicroscopy

|September 26, 2008

Summary

A new image processing technique, column ratio mapping, enhances atomic resolution analysis of scanning transmission electron microscopy (STEM) images. This method offers a more comprehensive compositional and interfacial assessment than traditional line profiles.

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Area of Science:

Materials Science
Electron Microscopy
Image Analysis

Background:

High-angle annular dark-field (HAADF) scanning transmission electron microscopy (STEM) provides atomic resolution imaging.
Conventional analysis of HAADF images often relies on limited line profiles, potentially missing broader compositional information.

Purpose of the Study:

To introduce and describe a novel image processing technique, column ratio mapping, for analyzing atomic resolution HAADF-STEM images.
To demonstrate the advantages of column ratio mapping over traditional methods for detailed structural and compositional analysis.

Main Methods:

Development of an automated image processing technique: column ratio mapping.
Application of the technique to measure atomic column intensity ratios in high-resolution HAADF images.
Utilizing the analytical capabilities of an aberration-corrected SuperSTEM 1 instrument for angstrom-scale resolution.

Main Results:

Column ratio mapping enables compositional distribution analysis across entire HAADF images.
The technique facilitates statistical analysis and error estimation for improved accuracy.
Column ratio mapping provides a more detailed assessment of interfacial structure sharpness.

Conclusions:

Column ratio mapping offers a more comprehensive analysis of HAADF-STEM images compared to single line profiles.
This technique is valuable for assessing interfacial sharpness and compositional variations at the atomic scale.
The method was successfully demonstrated on a [110]-oriented zinc-blende structured AlAs/GaAs superlattice.