Passively mode-locked GaInNAs disk laser operating at 1220 nm

Area of Science:

• Optics and Photonics
• Materials Science

Background:

• Semiconductor disk lasers (SDLs) are efficient solid-state laser sources.
• Dilute nitride semiconductors (e.g., GaInNAs) offer tunable emission wavelengths in the near-infrared spectrum.
• Passive mode-locking is a technique to generate ultrashort optical pulses.

Purpose of the Study:

• To demonstrate an optically-pumped semiconductor disk laser passively mode-locked using a semiconductor saturable-absorber mirror.
• To utilize dilute nitride semiconductor materials for laser operation around 1.2 micrometers.
• To explore an efficient method for generating red-wavelengths through external cavity frequency doubling.

Main Methods:

• Fabrication of a semiconductor disk laser incorporating both gain and saturable absorber elements made of GaInNAs.
• Optical pumping of the semiconductor disk laser.
• Passive mode-locking achieved using a semiconductor saturable-absorber mirror.
• Characterization of output pulse duration and average output power.

Main Results:

• The semiconductor disk laser operated at approximately 1.2 micrometers.
• Passive mode-locking was successfully achieved.
• The laser generated optical pulses with a duration of 5 picoseconds.
• An average output power of up to 275 mW was achieved.

Conclusions:

• The developed dilute nitride semiconductor disk laser is an efficient source for 1.2 micrometer wavelength generation.
• The laser's performance demonstrates the suitability of GaInNAs for passive mode-locking.
• This work presents a promising approach for generating red-wavelengths via external cavity frequency doubling.