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Related Experiment Video

Updated: Jun 28, 2026

Analysis of Contact Interfaces for Single GaN Nanowire Devices
11:13

Analysis of Contact Interfaces for Single GaN Nanowire Devices

Published on: November 15, 2013

In situ electron backscattered diffraction of individual GaAs nanowires.

S V Prikhodko1, S Sitzman, V Gambin

  • 1Department of Materials Science and Engineering, University of California Los Angeles, Los Angeles, CA 90095, USA. sergey@seas.ucla.edu

Ultramicroscopy
|November 11, 2008
PubMed
Summary

Electron backscattered diffraction (EBD) offers non-destructive in situ characterization of nanowire structure and morphology. This method reveals crystal phase and orientation, aiding understanding of substrate effects on nanowire growth.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Solid State Physics

Background:

  • Nanowire characterization is crucial for understanding their properties.
  • In situ analysis on growth substrates is challenging but provides vital context.
  • Electron microscopy techniques are standard but can be destructive or limited in scope.

Purpose of the Study:

  • To demonstrate electron backscattered diffraction (EBD) for non-destructive in situ nanowire characterization.
  • To analyze the structural and morphological properties of individual Gallium Arsenide (GaAs) nanowires on their growth substrate.
  • To investigate the influence of substrate structure on nanowire crystallinity and growth orientation.

Main Methods:

  • Utilizing scanning electron microscope-based electron backscattered diffraction (EBD) for in situ analysis.

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Last Updated: Jun 28, 2026

Analysis of Contact Interfaces for Single GaN Nanowire Devices
11:13

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Seedless Growth of Bismuth Nanowire Array via Vacuum Thermal Evaporation
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  • Performing transmission electron microscopy (TEM) and selected area electron diffraction (SAED) for verification.
  • Analyzing morphological, crystal phase, and crystal orientation of GaAs nanowires.

    • Main Results:

    • EBD successfully characterized GaAs nanowires in situ on the GaAs(111) B substrate.
    • Most nanowires exhibited a wurtzite structure with defects aligned normal to the growth axis.
    • Some defect-free nanowires displayed a zincblende structure.

    Conclusions:

    • EBD is a viable non-destructive technique for in situ nanowire characterization.
    • Substrate structure significantly influences nanowire crystallinity and growth orientation.
    • The approach is generalizable to other material systems for studying nanowire growth.