Aligned Er-doped ZnO nanorod arrays with enhanced 1.54 microm infrared emission

Vertically aligned Er-doped ZnO nanorod arrays with sharp and intense 1.54 microm infrared emission have been fabricated on Si substrates through a well controlled spin-coating and annealing process. The synthesis method is advantageous for synthesizing ZnO nanostructures free from structural defects, capability for large-scale production, minimum equipment requirement and product homogeneity. Er atoms were found to incorporate into ZnO lattice from XRD, ESCA, TEM, STEM/EDS and PL measurements. The single-crystal Er-doped nanorods maintained their high microstructural quality after annealing for 4 hr at 800 degreesC. The intensity of 1.54 microm infrared emission was found to be correlated with the deep level green emission. The enhanced luminescence intensity and best ever narrow wavelength distribution of Er-doped ZnO nanorod arrays at 1.54 microm emission will be conductive to applications in optoelectronic devices and optical communications.