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Ultrahigh Density Array of Vertically Aligned Small-molecular Organic Nanowires on Arbitrary Substrates
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Stacking faults in SiC nanowires.

K L Wallis1, M Wieligor, T W Zerda

  • 1Physics and Astronomy Department, Texas Christian University, Fort Worth, TX 76129, USA.

Journal of Nanoscience and Nanotechnology
|December 5, 2008
PubMed
Summary
This summary is machine-generated.

Silicon carbide (SiC) nanowires were synthesized using silicon vapor and carbon nanotubes (CNTs). Structural defect concentrations in SiC nanowires varied based on CNT origin, impacting their properties.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Solid State Chemistry

Background:

  • Carbon nanotubes (CNTs) are versatile materials with unique properties.
  • Silicon carbide (SiC) is a semiconductor with diverse applications.
  • Controlled synthesis of SiC nanostructures is crucial for advanced materials.

Purpose of the Study:

  • To synthesize silicon carbide (SiC) nanowires.
  • To investigate the influence of carbon nanotube (CNT) origin on SiC nanowire properties.
  • To characterize structural defects in SiC nanowires.

Main Methods:

  • Synthesis of SiC nanowires via vapor silicon reaction with multiwall CNTs at 1200°C in vacuum.
  • Characterization using Raman and IR spectrometry, X-ray diffraction, and high-resolution transmission electron microscopy (HRTEM).
  • Analysis of structural defects, including stacking faults, using HRTEM and Raman microscopy.

Main Results:

  • SiC nanowires exhibited consistent morphology and chemical composition across samples.
  • The concentration of structural defects, particularly stacking faults, varied with the CNT source.
  • HRTEM and Raman spectroscopy provided complementary data for defect characterization.
  • Raman microscopy enabled the study of defects within individual nanowires.
  • A surface layer of amorphous silicon carbide was observed on the nanowires.

Conclusions:

  • The origin of CNTs significantly influences the structural defect concentration in synthesized SiC nanowires.
  • Combined HRTEM and Raman spectroscopy are effective for characterizing defects in SiC nanowires.
  • SiC nanowire synthesis is controllable, with potential for tuning properties via CNT selection.