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Updated: Jun 27, 2026

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
Published on: May 24, 2020
Anodization of Ti thin film deposited on ITO
Abu Z Sadek1, Haidong Zheng, Kay Latham
1School of Electrical and Computer Engineering, RMIT University, Melbourne, Australia. sadek@ieee.org
Abstract:
We have investigated several key aspects for the self-organization of nanotubes in RF sputtered titanium (Ti) thin films formed by the anodization process in fluoride-ion-containing neutral electrolytes. Ti films were deposited on indium tin oxide (ITO) glass substrates at room temperature and 300 degrees C, and then anodized. The films were studied using scanning electron microscopy (SEM), X-ray diffraction (XRD), and UV-vis spectrometry before and after anodization. It was observed that anodization of high temperature deposited films resulted in nanotube type structures with diameters in the range of 10-45 nm for an applied voltage of 5-20 V. In addition, the anatase form of TiO(2) is formed during the anodization process which is also confirmed using photocurrent measurements. However, the anodization of room temperature deposited Ti films resulted in irregular pores or holes.

