Related Experiment Video
Updated: Jun 26, 2026

A Photonic System for Generating Unconditional Polarization-Entangled Photons Based on Multiple Quantum Interference
Published on: September 5, 2019
Optical bistability in a GaAs-based polariton diode.
Daniele Bajoni1, Elizaveta Semenova, Aristide Lemaître
1CNRS-Laboratoire de Photonique et Nanostructures, Route de Nozay, 91460 Marcoussis, France.
Researchers discovered a new optical nonlinearity in polariton microcavities, enabling low-power switching between strong and weak coupling regimes. This phenomenon exhibits bistable cycles and propagating switching fronts across the device surface.
Area of Science:
- Optics and Photonics
- Condensed Matter Physics
- Semiconductor Devices
Background:
- Polariton microcavities are crucial for exploring light-matter interactions.
- Optical nonlinearity is essential for advanced photonic devices.
- Previous nonlinear effects often required high optical powers.
Purpose of the Study:
- To investigate a novel optical nonlinearity in polariton p-i-n microcavities.
- To demonstrate electric-field-induced switching between coupling regimes.
- To characterize the observed bistability and switching dynamics.
Main Methods:
- Fabrication of polariton p-i-n microcavity structures.
- Application of controlled electric fields across the cavity.
- Optical measurements to observe coupling regimes and bistability.
- Imaging techniques to evidence switching front propagation.
Main Results:
- Observed abrupt switching between strong and weak coupling regimes via electric field control.
- Demonstrated bistable optical cycles at significantly low power levels (2-3 orders of magnitude lower than Kerr nonlinearity).
- Evidence of switching fronts propagating across a 300 x 300 micrometer mesa.
Conclusions:
- A new type of electric-field-controlled optical nonlinearity in polariton microcavities has been reported.
- This nonlinearity enables low-power optical switching and bistability.
- The findings pave the way for novel nonlinear photonic devices.
Related Concept Videos
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Schottky Barrier Diode
Diode: Reverse bias

