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MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

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Related Experiment Video

Updated: Jun 26, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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Microstructure of Mo/Si multilayers with B4C diffusion barrier layers.

Ileana Nedelcu1, Robbert W E van de Kruijs, Andrey E Yakshin

  • 1FOM-Institute for Plasma Physics Rijnhuizen, P.O. Box. 1207, 3430 BE Nieuwegein, The Netherlands. nedelcuileana@gmail.com

Applied Optics
|January 13, 2009
PubMed
Summary
This summary is machine-generated.

Investigating boron carbide (B(4)C) interlayers in Mo/Si multilayers revealed asymmetric growth. B(4)C on Mo maintains stoichiometry, while B(4)C on Si results in carbon diffusion and non-stoichiometric growth.

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Area of Science:

  • Materials Science
  • Thin Film Technology
  • Surface Science

Background:

  • Molybdenum/Silicon (Mo/Si) multilayers are crucial for extreme ultraviolet (EUV) optics.
  • Boron carbide (B(4)C) interlayers are used to improve the performance and stability of Mo/Si multilayers.
  • Understanding the interfacial growth behavior of B(4)C is essential for optimizing multilayer fabrication.

Purpose of the Study:

  • To investigate the growth behavior and stoichiometry of B(4)C interlayers at Mo/Si interfaces.
  • To understand the asymmetry in B(4)C formation between B(4)C-on-Mo and B(4)C-on-Si interfaces.
  • To correlate interfacial properties with the structural characteristics of the underlying layers.

Main Methods:

  • X-ray photoelectron spectroscopy (XPS) for elemental and chemical state analysis.
  • X-ray reflectivity (XRR) for depth profiling and interface characterization.
  • X-ray diffraction (XRD) for structural analysis of the layers.

Main Results:

  • Asymmetric B(4)C formation observed: stoichiometric on Mo, non-stoichiometric on Si due to carbon diffusion.
  • Off-stoichiometric B(4)C on Si leads to discrepancies in optical response and poor barrier properties.
  • Stoichiometry is linked to the substrate material (Mo vs. Si) and its diffusion characteristics.
  • Formation of Si-B-C compounds on Si interfaces explains carbon depletion and delayed B(4)C formation.

Conclusions:

  • The growth and stoichiometry of B(4)C interlayers are critically dependent on the underlying substrate material.
  • Enhanced diffusion into amorphous Si leads to non-stoichiometric B(4)C, impacting multilayer performance.
  • Higher formation enthalpies of Mo-B-C compounds and limited diffusion in Mo promote stoichiometric B(4)C growth on Mo.