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Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing
Published on: December 3, 2013
3DAP analysis of (Ga,Mn)As diluted magnetic semiconductor thin film
1Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-0047, Japan.
Ultramicroscopy
|January 24, 2009
Abstract:
The distribution of Mn in a Ga(0.963)Mn(0.037)As ferromagnetic semiconductor film has been characterized by the three-dimensional atom probe (3DAP) technique. Atom probe specimens were directly prepared from the (Ga,Mn)As film grown epitaxially on a p-type GaAs substrate by the lift-out technique using a scanning electron microscope/focused ion beam system. The atom probe elemental map revealed that the Mn atoms in the Ga(0.963)Mn(0.037)As are uniformly dissolved without forming any nanometer-sized clusters.
