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Related Experiment Video

Updated: Jun 11, 2026

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe₁₊_YTe Using a Spin-polarized Scanning Tunneling Microscope

Published on: March 24, 2019

A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction.

S Ikeda, K Miura, H Yamamoto

Nature Materials

|July 13, 2010

Summary

Researchers developed novel magnetic tunnel junctions (MTJs) using CoFeB-MgO for next-generation memory. These perpendicular MTJs offer high thermal stability, low switching current, and a high tunnel magnetoresistance ratio.

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Optimizing Magnetic Force Microscopy Resolution and Sensitivity to Visualize Nanoscale Magnetic Domains

Optimizing Magnetic Force Microscopy Resolution and Sensitivity to Visualize Nanoscale Magnetic Domains

Published on: July 20, 2022

Area of Science:

Spintronics and Nanomaterials Science
Solid State Physics and Materials Engineering

Background:

Magnetic tunnel junctions (MTJs) are crucial for high-density non-volatile memory and logic devices.
Achieving perpendicular magnetic anisotropy is key for enhanced thermal stability and low switching currents.
Existing electrode materials for perpendicular anisotropy in MTJs have limitations in simultaneously meeting thermal stability, switching current, and magnetoresistance requirements.

Discussion:

This study leverages interfacial perpendicular anisotropy at the ferromagnetic electrode-tunnel barrier interface.
The CoFeB-MgO material combination, known for high tunnel magnetoresistance in in-plane MTJs, is utilized.
The approach avoids novel materials, integrating into existing MTJ fabrication processes.

Key Insights:

Perpendicular MTJs fabricated with Ta/CoFeB/MgO/CoFeB/Ta structures exhibit a tunnel magnetoresistance ratio exceeding 120%.
These MTJs demonstrate high thermal stability at dimensions as small as 40 nm.
A low critical current for magnetization switching of 49 microA was achieved.

Outlook:

The findings pave the way for realizing high-performance, energy-efficient spintronic memory and logic devices.
Further research can optimize the CoFeB-MgO interface for even greater device performance.
This work offers a viable path towards scalable, next-generation magnetic memory technologies.