Thermopower enhancement in nanowires via junction effects

Nicolas B Duarte1, Gerald D Mahan, Srinivas Tadigadapa

  • 1Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA.

Nano Letters
|January 27, 2009
PubMed
Summary

Researchers observed a significant peak in thermopower near room temperature for "junctioned" gold nanowires. This thermoelectric enhancement, attributed to electron tunneling and Coulombic effects, led to a hundredfold increase in ZT, a key figure of merit.

Related Concept Videos

P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
Joule-Thomson Effect01:21

Joule-Thomson Effect

The Joule-Thomson effect, also known as the Joule-Kelvin effect, describes the temperature change of a fluid when it is forced through a valve or porous plug while keeping it in a thermally insulated environment. This experiment is called a throttling process. This is an important effect widely used in refrigeration and the liquefaction of gases.
This experiment forces high-pressure gas through a throttle valve or a porous plug to a lower-pressure region. The gas expands as it passes through to...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Thermodynamic Potentials01:26

Thermodynamic Potentials

Thermodynamic potentials are state functions that are extremely useful in analyzing a thermodynamic system. They have dimensions of energy. The four important thermodynamic potentials are internal energy, enthalpy, Helmholtz free energy, and Gibbs free energy. These thermodynamic potentials can be expressed using two of the following variables: pressure, volume, temperature, and entropy. These two variables are expressed as the rate of change of the thermodynamic potential with respect to other...