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Electro-thermal analysis of nano scale PRAM with U shaped bottom electrode
Hong Kyw Choi1, Nakwon Jang, Young Sam Park
1Division of Electrical and Electronics Engineering, Korea Maritime University, Busan 606-791, Korea.
Journal of Nanoscience and Nanotechnology
|February 10, 2009
Abstract:
In this paper, we have investigated the phase change memory device with U-shaped bottom electrode using three-dimensional finite element analysis tool. From the simulation, the reset current of PRAM with U-shaped bottom electrode is greatly reduced, compared with the conventional device. And the experimental result clearly shows that the PRAM with U-shaped bottom electrode has 35% smaller RESET current, compared with the conventional PRAM device.
