Fabrication and characterization of a double quantum dot structure

Area of Science:

• Solid State Physics
• Quantum Computing
• Nanotechnology

Background:

• Quantum dots (QDs) are crucial for quantum computing.
• Existing fabrication methods can be complex and costly.
• Developing scalable and efficient QD structures is essential.

Purpose of the Study:

• To report the fabrication and characterization of a novel double quantum dot (QD) structure.
• To demonstrate the use of standard CMOS processing for QD fabrication.
• To analyze the electrical characteristics of the fabricated double QD structure.

Main Methods:

• Fabrication of a double QD structure using standard CMOS processing on a silicon-on-insulator nanowire.
• Utilizing three CMOS poly-Si gates with oxide sidewall spacers.
• Defining QDs via implanted n+ regions, with sidewall spacers acting as implantation masks.
• Characterization through electrical measurements to observe Coulomb oscillations and diamonds.

Main Results:

• Successful fabrication of a double QD structure without gate bias.
• Observation of clear Coulomb oscillations with two-peak splitting.
• Identification of saw-tooth shaped Coulomb diamonds.
• Simulation accurately reproduced experimental results.

Conclusions:

• The developed method provides a scalable approach for fabricating double QDs.
• The novel QD structure exhibits promising characteristics for quantum applications.
• Standard CMOS processing offers a viable route for advanced quantum device fabrication.