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Updated: Jun 25, 2026

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Published on: April 12, 2018
Simulation study of the scaling behavior of top-gated carbon nanotube field effect transistors
Mincheol Shin1, Jaehyun Lee, Chiyui Ahn
1School of Engineering, Information and Communications University, Daejeon 305-732, Republic of Korea.
Abstract:
Device simulations on three-dimensional top-gated carbon nanotube field effect transistors (CNTFETs) have been performed by considering the quantum transport described in the framework of non-equilibrium Green's function method. Device characteristics of various top-gated CNTFETs, such as Schottky-barrier CNTFETs, CNTFETs with doped source and drain, and tunnel-FET-like CNTFETs, have been examined, focusing on their scaling behavior as the channel length is ultimately reduced down to a few nanometers. Comparison with coaxially-gated devices is also made.
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